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| PTF 10133 85 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. * * * * * * INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 120 Efficiency 60 50 40 Output Power (Watts) 100 80 60 40 20 Output Pow er 0 0 1 2 3 4 5 6 Efficiency (%) VDD = 28.0 V IDQ = 1.0 A f = 894 MHz 30 20 10 0 A-12 3456 9947 1013 3 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 12.5 85 45 -- Typ 13.5 90 50 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10133 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 3.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 205 1.18 -40 to +150 0.85 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 18 17 16 Output Pow er (W) Gain 15 14 13 12 11 120 110 100 90 80 Broadband Test Fixture Performance 20 Efficiency (%) 50 16 60 Gain (dB) Gain (dB) 12 40 Gain VDD = 28 V IDQ = 1.0 A POUT = 85 W 30 20 0 Return Loss (dB) -10 10 60 50 8 10 40 860 865 870 875 880 885 890 895 900 Efficiency 4 0 -20 860 865 870 875 880 885 890 895 900 Frequency (MHz) Frequency (MHz) 2 Return Loss VDD = 28 V IDQ = 1.0 A 70 Efficiency e Output Power vs. Supply Voltage 110 PTF 10133 Capacitance vs. Supply Voltage * 300 250 48 Output Power (Watts) 100 90 80 70 60 50 40 24 26 28 30 32 34 36 Cds & Cgs (pF) Cgs VGS = 0 V f = 1 MHz 40 150 100 24 Cds Crss 16 8 0 IDQ = 1.0 A f = 894 MHz 50 0 0 10 20 30 40 Supply Voltage (Volts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -10 3rd Order -20 Power Gain vs. Output Power 16 IDQ = 1.0 15 -30 -40 -50 -60 -70 0 20 40 60 80 100 5th 7th Power Gain (dB) VDD = 28 V, IDQ =1A f1 = 894 MHz, f2 = 894.1 MHz IMD (dBc) 14 IDQ = 500 13 12 11 0.1 10.0 1000.0 IDQ = 250 VDD = 28 V f = 894 MHz Output Power (Watts-PEP) Output Power (Watts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.86 Voltage normalized to 1.0 V Series show current (A) 0.99 0.98 0.97 0.96 0.95 -20 30 80 Temp. (C) 2.5 4.16 5.8 7.42 9.06 130 3 Crss (pF) 200 32 PTF 10133 Impedance Data Z Source Z Load W AR D e D GE (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A) Z0 = 50 W 0.1 G Z Load S TOW ARD LOAD Frequency MHz 860 870 880 890 900 925 942 960 R Z Source W jX -3.2 -3.2 -3.2 -3.1 -2.9 -2.0 -0.6 1.1 R 1.3 1.3 1.3 1.3 1.2 1.2 1.2 1.2 3.2 3.6 4.1 4.7 5.3 7.0 8.1 7.7 Z Load W jX 1.2 1.1 0.9 0.8 0.8 0.7 0.7 0.6 0.0 860 MHz 0.1 960 MHz 0.2 960 MHz 860 MHz S NG TH VEL E Z Source 0 .1 WA <--- 0 .2 Typical Scattering Parameters (VDS = 28 V, ID = 2 A per side) f (MHz) 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S11 Mag 0.980 0.982 0.983 0.989 0.989 0.987 0.983 0.982 0.980 0.972 0.958 0.929 0.858 0.693 0.783 0.918 0.951 0.974 0.988 0.984 0.979 0.980 0.992 0.991 0.986 S21 Ang -178 -179 -180 179 179 179 178 177 176 175 174 171 168 173 -170 -172 -175 -177 -178 -179 -180 180 180 179 178 S12 Ang 15.6 12.8 9.48 7.19 5.48 2.11 -0.90 -4.52 -10.2 -14.3 -19.9 -27.5 -42.4 -75.9 -125 -153 -167 -179 165 158 -154 179 166 156 149 S22 Ang -85.2 -85.3 -85.7 -85.3 -93.7 -74.5 -64.9 -68.5 -55.1 -88.5 -87.2 -105 -133 174 120 101 89.2 81.8 77.9 76.7 77.4 73.9 74.5 78.7 79.7 Mag 0.996 0.773 0.641 0.545 0.489 0.449 0.425 0.414 0.405 0.419 0.442 0.509 0.662 0.882 0.714 0.423 0.261 0.184 0.124 0.060 0.048 0.070 0.058 0.049 0.042 Mag 0.010 0.008 0.006 0.005 0.003 0.002 0.002 0.001 0.001 0.001 0.001 0.005 0.013 0.030 0.028 0.022 0.020 0.019 0.018 0.017 0.018 0.018 0.018 0.019 0.021 Mag 0.994 0.993 0.992 0.996 0.999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 0.983 0.990 0.992 0.984 Ang -177 -177 -178 -179 -179 -179 -179 -180 -180 180 180 179 179 179 179 179 179 178 178 178 178 178 177 178 178 4 e Test Circuit PTF 10133 Test Circuit Schematic for f = 894 MHz DUT PTF 10133 0.040 l 894 GHz 0.096 l 894 GHz 0.098 l 894 GHz 0.073 l 894 GHz 0.107 l 894 GHz 0.110 l 894 GHz 0.250 l 894 GHz 0.081 l 894 GHz 0.178 l 894 GHz 0.040 l 894 GHz LDMOS Field Effect Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.29 W Microstrip 9.29 W Microstrip 6.98 W Microstrip 77.9 W Microstrip 6.98 W Microstrip 50 W Microstrip 50 W C1, C3, C5, C10 C2 C4 C6 C7 C8 C9 R1, R2, R3 Circuit Board Circuit Board Capacitor, 36 pF ATC 100 B Capacitor, 4.3 pF ATC 100 B Capacitor, 6.2 pF ATC 100 B Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND Capacitor, 2.0 pF ATC 100 B Capacitor, 0.6-6 pF ATC 100 B Resistor, 220 W Digi-Key 1KQBK er = 4.0, .028 Dielectric Thickness, 1 Oz. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 Components Layout (not to scale) 5 PTF 10133 e Artwork (1 inch ) Package Mechanical Specifications Package 20248 Unless otherwise specified all tolerance 0.005" Pins: 1.Drain 2.Source 3.Gate Lead Thickness: 0.004 +0.002/-0.001" Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10133 Uen Rev. A 12-01-99 6 |
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